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Research Associate in Advanced Epitaxy for Integrated Optoelectronics
Cardiff University leads the Engineering and Physical Sciences Research Council (EPSRC) funded Future Compound Semiconductor Manufacturing Hub (Hub), part of the UK-based Compound Semiconductor Cluster, with three academic partners: University College London (UCL), the University of Manchester and the University of Sheffield. The Hub utilises Europe-leading facilities at the Institute for Compound Semiconductors (ICS) and Compound Semiconductor Centre (CSC), translating research into large-scale Compound Semiconductor (CS) growth and device fabrication. As part of the Hub/ICS, we are seeking to appoint a talented, motivated postdoctoral researcher with expertise in advanced epitaxial methods for integrated optoelectronic devices and systems.
The Research Programme
The envisioned research targets Metal Organic Vapour Phase Epitaxy (MOVPE) to advance the field of Integrated Optoelectronics. Our applications focus on a compound semiconductor (III-V) on Silicon platform to develop systems for communication, remote sensing, medical imaging and quantum technology with local, UK and industrial collaborations. Several related positions in integration, optoelectronics and photonics are open in parallel to support the Hub, ICS, and the larger CS Connected cluster forming in Wales.
For background, the ICS forms part of > £300m investment in new research and innovation centres, and its potential is already recognised by the Welsh and UK governments, who have invested over £29m towards its creation. The ICS will be a unique facility in Europe, equipped with epitaxy, state-of-the art fabrication and device characterisation facilities. Stimulated by demand for creative and professional prototyping service, the ICS provides an environment to grow academic research and industrial projects.
Qualifications and Experience
Candidates will have a PhD in Engineering, Physics or closely-related subject focusing on III-V MOVPE processes applied to advanced optoelectronic devices. Experience epitaxy of III-Arsenic(As), Antimony(Sb) or Phosphorous (P) compounds is absolutely essential. Epitaxial integration on Si, lattice-mismatched materials along with patterned or nanoepitaxy are highly desirable. You will have a strong research record demonstrated through publications in high quality academic journals; experience participating in research proposals and research/industry-based groups with proven ability to network effectively with academics and outside academia.
Please submit with your completed application and your full CV. We also require a statement of research interests and career goals (2 pages max).
For informal enquiries please email Professor Diana Huffaker on HuffakerDL@cardiff.ac.uk.
For more information about working at Cardiff University contact Glesni Lloyd on LloydGW@cardiff.ac.uk
This post is full-time and fixed term for 3 years.
Salary: £32,584 - £38,833 per annum (Grade 6)
Date advert posted: Thursday, 30 November 2017
Closing Date: Thursday, 11 January 2018
Cardiff University and the School of Physics and Astronomy are committed to supporting and promoting equality and diversity. Our inclusive environment welcomes applications from talented people from diverse backgrounds. We strongly welcome female applicants and those from any ethnic minority group, as they are underrepresented in our School. The School of Physics & Astronomy has a Juno Practitioner accreditation that recognises good employment practice and a commitment to develop the careers of women working in science. The University is committed to ensuring that we sustain a positive working environment for all staff to flourish and achieve. As part of this commitment, the University has developed a flexible and responsive framework of procedures to support staff in managing their work and personal commitments wherever possible. Applications are welcome from individuals who wish to work part-time or full time.